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Abstract Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry process. With this platform, we achieve single-photon emission via resonance fluorescence and scalable emission wavelength tunability. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries. 

Waveguide-based optical mode conversion requires wavelength-scale patterning of the waveguide's optical properties. We implement a programmable version of this patterning with piezoelectrically actuated photonics. 

Advances in laser technology have driven discoveries in atomic, molecular, and optical (AMO) physics and emerging applications, from quantum computers with cold atoms or ions, to quantum networks with solid-state color centers. This progress is motivating the development of a new generation of optical control systems that can manipulate the light field with high fidelity at wavelengths relevant for AMO applications. These systems are characterized by criteria: (C1) operation at a design wavelength of choice in the visible (VIS) or near-infrared (IR) spectrum, (C2) a scalable platform that can support large channel counts, (C3) high-intensity modulation extinction and (C4) repeatability compatible with low gate errors, and (C5) fast switching times. Here, we provide a pathway to address these challenges by introducing an atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology. Based on a complementary metal–oxide–semiconductor fabrication process, this atom-control PIC (APIC) technology can meet system requirements (C1)–(C5). As a proof of concept, we demonstrate a 16-channel silicon-nitride-based APIC with (5.8±0.4)ns response times and >30dB extinction ratio at a wavelength of 780 nm. 

We demonstrate a photonic crystal cavity interferometric modulator in thin-film lithium niobate on insulator with 6 GHz bandwidth, 35 dB extinction, 2π ×1.27 GHz/V DC-tuning, and a 40-by-200 micron square footprint. 

We introduce a constructive algorithm for universal linear electromagnetic transformations between theNinput andNoutput modes of a dielectric slab. The approach uses out-of-plane phase modulation programmed down toN²degrees of freedom. The total area of these modulators equals that of the entire slab: our scheme makes optimal use of the available area for optical modulation. We also present error correction schemes that enable high-fidelity unitary transformations at largeN. This “programmable multimode interferometer” (ProMMI) thus translates the algorithmic simplicity of Mach-Zehnder meshes into a holographically programmed slab, yielding DoF-limited compactness and error tolerance while eliminating the dominant sidewall-related optical losses and directional-coupler-related patterning challenges. 

We introduce hybrid integrated telecom single-photon sources on a commercial foundry multilayer silicon photonic chip. We show above-band and resonant waveguide-coupled single-photon emission tunable via the DC Stark shift. 

We demonstrate the integration of superconducting single-photon detectors onto arbitrary photonic substrates via transfer printing. Using this method, we show single-photon detection in a lithium niobate on insulator photonic circuit. 

Abstract The scaling of many photonic quantum information processing systems is ultimately limited by the flux of quantum light throughout an integrated photonic circuit. Source brightness and waveguide loss set basic limits on the on-chip photon flux. While substantial progress has been made, separately, towards ultra-low loss chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report the integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic circuit. We demonstrate triggered and pure single-photon emission into a Si₃N₄photonic circuit with ≈ 1 dB/m propagation loss at a wavelength of ≈ 930 nm. We also observe resonance fluorescence in the strong drive regime, showing promise towards coherent control of quantum emitters. These results are a step forward towards scaled chip-integrated photonic quantum information systems in which storing, time-demultiplexing or buffering of deterministically generated single-photons is critical.